Method for metal or metal compounds inserted between adjacent graphite layers

ABSTRACT

A method for preparing a graphite intercalation compound having a metal or a metal compound inserted between adjacent graphite layers, comprising simultaneously introducing a mixture of a vapor of both a hydrocarbon compound and an organo metallic compound together with a carrier gas into a reactor, and decomposing said hydrocarbon compound and said organo metallic compound on a single-crystalline substrate at a relatively low temperature.

This application is a divisional of co-pending application Ser. No.07/190,353 filed on May 5, 1988, now U.S. Pat. No. 4,946,370, which inturn is a continuation-in-part of application Ser. No. 06/841,188 filedon Mar. 19, 1986.

BACKGROUND OF THE INVENTION

The present invention relates to a process for preparing a pyrolyticcarbon film, a graphite intercalation compound and a doped carbon film.

Graphite unique properties associated with its layer structure such asanisotropies in thermal and electrical conductivity. However, thesynthesis of graphite requires extreme conditions of pressure andtemperature due to the fact that it has an inaccessible melting pointand an extremely low sublimation pressure. For example, so called HOPGis prepared by decomposing a gaseous hydrocarbon (e.g. methane) at2,000° C. and then hot pressing the resulting pyrolytic material atstill a higher temperature. It is now well known that most carboneceousmaterials are graphitized when they are subjected to a heat treatment attemperatures above 2,500° C. On the other hand, there have been manyefforts to prepare pyrolytic carbons, at low decomposition temperaturesutilizing dehydrogenation, dehydrohalogenation, decarbonic acid, and thedehydration of selected hydrocarbons. However, the carbon deposits thusobtained are of such a poorly ordered state that they are insufficientto provide anisotropic materials or device made therefrom. There alsobeen known carbon fibers which are obtained by the heat treatment of afibrous polymer compound at high temperature. These carbon fibers arewidely used for structural materials, but their instability in physicalproperties debases their usefulness for new electronic materials ordevices utilizing anisotropic electrical and thermal conductivity. Theyalso lack reproducibility.

To modify graphite leads to the establishment of a variety of degrees ofanisotropy, there have been studied many kinds of graphite intercalationcompounds (GIC) which are achieved by allowing metal atoms, metalhalides or acids to be inserted between adjacent graphite layers of ahost graphite material. However, the common method such as the two-zonevapor transport technique and the electrochemical reaction method, aswell as other novel methods essentially achieved by direct contact ofliquid or gaseous species with host graphite, was applied to suchlimited reagents that have a low melting point or a high vapor pressure.Most of these compounds with graphite elaborated by these methods arenot only unstable but are also sensitive to heat. There has not beenreported any air stable GIC in which the intercalant is fixed firmly,nor a practical utilization of the anisotropic properties involved inthe new electronic device.

Impurity doping is another method of controlling the degree ofanisotropy or the type of conductivity (P-type or N-type). But the factthat graphite is thermodynamically very stable refutes the diffusiontechnique often used in the fabrication of doped silicon or a germaniumsemiconductor. Accordingly, doped graphite has not been reported.

SUMMARY OF THE INVENTION

The present invention is directed to a method for preparing pyrolyticcarbon films with a highly ordered graphite structure at relatively lowtemperature. The method comprises the thermal decomposition of organiccompounds such as aromatic and unsaturated hydrocarbons introduced by acarrier gas into a reaction chamber to deposit the carbon films onto asingle-crystalline substrate.

The present invention also is directed to a method for preparingintercalation compounds with metal or metal compounds. The methodconsists of the simultaneous thermal decomposition of two kinds ofstarting materials by a CVD (Chemical Vapor Deposition) method in whichthe hydrocarbon as a source material for the host graphite and the otherorganometallic reagents or metal halides for guest metal species ormetal compounds are decomposed simultaneously in a reactor in order tointercalate the metal species or metal compound into the carbon beingdeposited on the substrate.

Further, the present invention is to provide a doped carbon film whichis capable of P-type or N-type, depending upon the kind of dopantutilized. The doped film is obtained by partial substitution of dopantsfor carbon atoms which constitute graphite hexagonal net layer duringthe growth of carbon films, through simultaneous thermal decompositionof two kinds of source materials for carbon films and for dopant to besubstituted.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will become more fully understood from thefollowing detailed description given here below and the accompanyingFigures which are given by way of illustration only, and thus are notintended to be limitative of the present invention, and wherein:

FIG. 1 shows a schematical view of an apparatus for preparing apyrolytic carbon film according to the first embodiment of the presentinvention.

FIG. 2 shows a schematical view of the apparatus for preparing thegraphite intercalation compound of the present invention.

FIG. 3 shows a schematical view of the apparatus for preparing the dopedcarbon film of the present invention.

DETAILED DESCRIPTION OF THE PRESENT INVENTION

The hydrocarbons employed in the present invention as a startingmaterial include hydrocarbons, preferably aromatic hydrocarbons, andunsaturated hydrocarbons, which are generally decomposable atapproximately 1,000° C. Typical examples of the hydrocarbons arecyclohexane, n-hexane, benzene, biphenyl, anthracene, hexamethylbenzene,1,2-dibromoethylene, 2-butyne, acetylene, diphenylacetylene and thelike. The method for supplying the hydrocarbon varies depending on thekind of hydrocarbon, but includes bubbling method, the vaporizationmethod, the sublimation method and the like. The regulated hydrocarbonis supplied at a constant rate of not more than 10 mmol/hour in order toprepare carbon films with metals. But the supply rates are not limitedbecause they vary depending on the type of the hydrocarbon. Supply rateslarger than 10 mmol/hour forms soot-like carbon deposit over thesubstrate. A build-up time of the pyrolytic carbon film is 0.1 to 10μm/hour, preferably 0.1 to 2 μm/hour, more preferably 0.1 to 1 μm/hour.

The carrier gas used to introduce the above mentioned hydrocarbon intothe reaction chamber is hydrogen or an inert gas, such as argon ornitrogen. When the bubbling method for supplying the hydrocarbon isemployed, hydrogen or argon is preferably as the carrier gas.

For the preparation of graphite intercalation compounds or doped carbonfilms, another kind of starting material beside hydrocarbon is used.Examples of the source material for metal intercalant includes organometallic compounds such as tetraphenyl tin and tetraphenyl lead.Examples of the source material for the dopant are boron tetrabromideand pyridine. The simultaneous thermal decomposition of these startingmaterials together with the starting material for the carbon filmprovides metal intercalant or dopant during the growth of the carbonfilms. The metal atoms of the organometal compound are believed to beinserted between adjacent graphite layers of carbon films being grown onthe substrate. The dopant such as boron (P type) or nitrogen (N type)are partially substituted for carbon atoms which constitute the graphitehexagonal net layer during the growth of carbon films on the substrate.

The establishment of low temperature growth of pyrolytic carbon filmsprovides practical utilization of its anisotropic properties to newelectronic materials. The synthesis of air stable GIC in which thegraphite is modified by intercalation provides still more importantapplication due to a variety degree of anisotropy. Further, the presentinvention makes it possible that dopants are introduced into thegraphite hexagonal net plane to provide doped carbon of the P-type orN-type.

The single-crystalline substrate which is deposited includes silicon,sapphire, silicon carbide (including alpha-type and beta-type), boronnitride, kish graphite, high orientation graphite and the like, which isrequired to have no modification at about 1,000° C.

PREFERRED EMBODIMENTS

The following examples illustrate the present invention, but they arenot construed as limiting the present invention.

EXAMPLE 1

In FIG. 1, benzene is selected as a starting material and the bubblingmethod using argon as the carrier gas is employed for the preparation ofpyrolytic carbon films. The low pressure CVD can also be achieved withthe apparatus shown in FIG. 1. This method can provide carbon films inuniform thickness compared with the bubbling method under atmosphericpressure.

Benzene molecules are introduced to the bubbling method of the carriergas into a quartz reaction tube 4 through a pyrex glass tube 3 from afeed stock 1 wherein benzene purified through vacuum distillation isaccommodated. The supply rate of benzene is determined by valve 5 whichregulates the flow rate of Ar bubbling gas in which benzene vapor issaturated. In order to supply benzene strictly at a constant rate ofseveral mmol/hour, the present example was 1 mmol/hour, the feed stockis kept a constant temperature and the gas is further preregulated byregulator 7. The benzene partial concentration is controlled by anotherAr gas flow through pyrex tube 6. A piece of single-crystallinesubstrate, placed at the center position on the pedestal 7, is heated upto 1,000° C. by the heating furnace 8 around the reaction tube 4. Thusbenzene molecules led into the reaction tube 4 are thermally decomposedat 1,000° C. and the carbon deposit having metallic luster are formed onthe single-crystalline substrate. The remaining vapor led to thereaction tube 4 is discharged outside 10 through a discharge pipe 9.

The density of carbon deposits obtained were determined to be 2.1±0.1g/cm² by the float method using a mixture of carbon tetrachloride andmethane dibromide. Infrared spectrum of the carbon films did not showthe existence of --CH, --CH₂ and --CH₃. Ordered structure of thedeposited carbon film was evaluated by high speed reflectiveelectron-beam diffraction (RHEED). Arcing of diffraction ring wasobserved (see ACTA CRYSTALLOGRAPHICA, vol. 12, (1959), pp. 382-384).When structure is not ordered, electric conductivity was ρ₁₁ =2×10⁻³Ω·cm at a direction parallel to the substrate. When structure is highlyordered as seen in the present invention, electric conductivity was ρ₁₁=1×10⁻³ to 5×10⁻⁴ Ω·cm.

EXAMPLE 2

A graphite intercalation compound was deposited by using the apparatusshown in FIG. 2.

Benzene was purified by vacuum distillation and stocked in a container21. By opening a cock 24, the vapored benzene were introduced into aquartz reaction chamber 23 through a pyrex glass tube 22. The benzenesupply was controlled by a glass capillary 25 which was equipped withthe glass tube 22. The vapor of tetraphenyl tin was supplied from acontainer 6. It was admixed with the benzene vapor in the glass tube 22,and these were introduced into the reaction chamber 23 together. Theglass tube 22 was wrapped with a heating tape 27 to keep its temperatureconstant. The glass tube 22 was connected with the quartz reactionchamber 23 with a connector 28. The reaction chamber 23 was inserted ina heater 29 and heated to a reaction temperature. A single crystalsubstrate was placed on a holder 10 in the reaction chamber. The remainof the vapor which had been introduced into the reaction tube 23 wasdrained through a drain tube 31.

Benzene whose supply rate was controlled by the capillary 25 andtetraphenyl tin were mixed and introduced into the reaction chamber 23which was kept at 900° to 1,000° C. by the heater 29. The supply rate ofthe mixture was kept under a few mmol/hour. The benzene molecules whichhad been introduced to the reaction tubed 23 were thermally decomposedand formed a pyrolytic carbon which had metallic luster on thesubstrate. At the same time, tetraphenyl tin was also pyrolyticallydecomposed to insert tin atoms between the graphite-like carbon layers.A graphite intercalation compound is formed. The obtained film of thegraphite intercalation compound possessed high crystallinity under theinfluence of the crystallinity of the substrate and showed the highorientation at a lower temperature than the conventional method. As thesupply rate of benzene and tetraphenyl tin was kept constant, the grownfilm of graphite intercalation compound had a uniform thickness. Itprovides metal gloss and mirror surface together with the highcrystallinity.

It has been confirmed by observing the X-ray image of tin using anelectron microscopy the tin atoms have existed uniformly in the film ofthe graphite. By an X-ray diffraction of the obtained film of thegraphite intercalation compound, a reflection corresponding to the sumof the atomic radius of tin and distance between the graphite layers wasobserved in addition to the reflection of the graphite (002).

In addition, the graphite intercalation compound could be also formedwhen tetraphenyl lead was used instead of tetraphenyl tin.

EXAMPLE 3

In FIG. 3, the bubbling method using Ar as carrier gas is employed forthe preparation of doped carbon films. Benzene is selected as sourcematerial for carbon film and pyridine or boron tribromide is used assource material for nitrogen or boron dopant which will give N type or Ptype conductivity to carbon films.

The benzene purified through vacuum distillation is accommodated in afeed stock 11. In addition, starting materials for dopant purifiedthrough vacuum distillation is accommodated in a feed stock 11'. Bothbenzenes and source reagents for dopant are introduced at a same timeinto the reaction tube 14 through a pyrex glass tube 13 by bubblingmethod of the two Ar carrier gases which are regulated independently byvalves 15. Supply rate of each material is controlled by each flow rateof Ar gas in which each vapor of starting materials is saturated. Apiece of single-crystalline substrate, placed at the center position onthe pedestal 17, is heated up to 1,000° C. by the heating furnace 18around the reaction tube 14. Thus, the mixture of the two sourcematerials led into the reaction tube 14 are decomposed simultaneously at1,000° C. Then, the doped carbon films is obtained by partialsubstitution of dopants for carbon atoms during the growth of carbonfilms.

The existence of dopant element was confirmed by an Auger spectroscopyand the resistivity of the films varies depending on the amount of thedopant being existing.

The invention being thus described, it will be obvious that the same maybe varied in many ways. Such variations are not to be regarded as adeparture from the spirit and scope of the present invention, and allsuch modifications as would be obvious to one skilled in the art areintended to be included within the scope of the following claims.

What is claimed is:
 1. A method for preparing a graphite intercalationcompound having a metal or a metal compound inserted between adjacentgraphite layers, comprisingsimultaneously introducing a mixture of avapor of both a hydrocarbon compound and an organo metallic compoundselected from at least one member of the group consisting of tetraphenyltin and tetraphenyl lead together with a carrier gas into a reactor, anddecomposing said hydrocarbon compound and said organo metallic compoundon a single-crystalline substrate at a temperature within the range offrom 900° to 1000° C.
 2. The method according to claim 1, wherein saidhydrocarbon compound is selected from at least one member of the groupconsisting of cholohexane, n-hexane, benzene, biphenyl, anthracene,hexamethylbenzene, 1,2-dibromoethylene, 2-butyne, acetylene anddiphenylacetylene.
 3. The method according to claim 2, wherein saidhydrocarbon compound is benzene.
 4. The method according to claim 1,wherein said carrier gas is selected from at least one member of thegroup consisting of argon and nitrogen.
 5. The method according to claim1, wherein said single-crystalline substrate is selected from at leastone member of the group consisting of silicon, sapphire, siliconcarbide, boron nitride, kish graphite and high orientation graphite. 6.The method according to claim 1, wherein said vapor and carrier gasmixture is introduced at a supply rate under a few mmol/hour.